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  2SK3797 2004-1-22 1 toshiba field effect transistor silicon n channel mos type (  -mosvi) 2SK3797 switching regulator applications ? low drain-source on resistance: r ds (on) = 0.32 
(typ.) ? high forward transfer admittance: ? low leakage current: i dss = 100  a (v ds = 600 v) ? enhancement-mode: v th = 2.0~4.0 v (v ds = 10 v, i d = 1 ma) maximum ratings (ta = = = = 25c) characteristics symbol rating unit drain-source voltage v dss 600 v drain-gate voltage (r gs = 20 k ? ) v dgr 600 v gate-source voltage v gss 30 v dc (note 1) i d 13 drain current pulse (t = 1 ms) (note 1) i dp 52 a drain power dissipation (tc = 25c) p d 47 w single pulse avalanche energy (note 2) e as 749 mj avalanche current i ar 13 a repetitive avalanche energy (note 3) e ar 4.7 mj channel temperature t ch 150 c storage temperature range t stg -55~150 c thermal characteristics characteristics symbol max unit thermal resistance, channel to case r th (ch-c) 2.66 c/w thermal resistance, channel to ambient r th (ch-a) 62.5 c/w note 1: please use devices on conditions that the channel temperature is below 150c. note 2: v dd = 90 v, t ch = 25c(initial), l = 7.8mh, i ar = 13 a, r g = 25 ? note 3: repetitive rating: pulse width limited by maximum channel temperature this transistor is an electrostatic sensitive device. please handle with caution. ? unit: mm 1: gate 2: drain 3: source jedec D jeita sc-67 toshiba 2-10u1b weight : 1.7 g (typ.) 1 3 2 preliminary
2SK3797 2004-1-22 2 electrical characteristics (ta = = = = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 25 v, v ds = 0 v ? ? 10 a gate-source breakdown voltage v (br) gss i g = 10 a, v ds = 0 v 30 ? ? v drain cut-off current i dss v ds = 600 v, v gs = 0 v ? ? 100 a drain-source breakdown voltage v (br) dss i d = 10 ma, v gs = 0 v 600 ? ? v gate threshold voltage v th v ds = 10 v, i d = 1 ma 2.0 ? 4.0 v drain-source on resistance r ds (on) v gs = 10 v, i d = 6.5 a ? 0.32 0.45 ? forward transfer admittance ? y fs ? v ds = 10 v, i d = 6.5 a ? 7.0 ? s input capacitance c iss ? 3150 ? reverse transfer capacitance c rss ? 18 ? output capacitance c oss v ds = 25 v, v gs = 0 v, f = 1 mhz ? 270 ? pf rise time t r ? 60 ? turn-on time t on ? 110 ? fall time t f ? 50 ? switching time turn-off time t off ? 215 ? ns total gate charge q g ? 62 ? gate-source charge q gs ? 40 ? gate-drain charge q gd v dd ? 400 v, v gs = 10 v, i d = 13 a ? 22 ? nc source-drain ratings and characteristics (ta = = = = 25c) characteristics symbol test condition min typ. max unit continuous drain reverse current (note 1) i dr ? ? ? 13 a pulse drain reverse current (note 1) i drp ? ? ? 57 a forward voltage (diode) v dsf i dr = 13 a, v gs = 0 v ? ? ? 1.7 v reverse recovery time t rr ? 1050 ? ns reverse recovery charge q rr i dr = 13 a, v gs = 0 v, di dr /dt = 100 a/ s ? 15 ? c marking r l = ? 30 ? 0 v 10 v v gs v dd ? 200 v i d = 6.5 a v out 50 ? duty < = 1%, t w = 10 s t lot number ? t type k3797 month (starting from alphabet a) year (last number of the christian era) preliminary
2SK3797 2004-1-22 3 5v 7v 5.8v 8v 6.2v 6.6v 10v 5.4v v gs = 4 v drain current i d (a) r ds (on) ? i d drain ? source on resistance r ds (on) ( ? ) drain ? source voltage v ds (v) i d ? v ds drain current i d (a) 14 6 4 0 12 2 drain ? source voltage v ds (v) i d ? v ds drain current i d (a) gate ? source voltage v gs (v) i d ? v gs drain current i d (a) 0 0 2 4 6 8 10 10 30 10v 20 25 5 gate ? source voltage v gs (v) v ds ? v gs 0 6 8 10 0 4 8 12 16 20 8 10 4 2 drain current i d (a) ? y fs ? ? i d forward transient admitance ? y fs ? (s) 0.1 0.1 1 10 100 0.3 1 0.1 10 100 0.1 100 10 0 2 4 8 common source tc = 25c pulse test 10 25 20 10 5 0 30 0 10 30 common source tc = 25c pulse test 6.2v 7v 6.6v 25 20 5 v gs = 4v 8v 15 5v 15 5.8v 5.4v common source tc = 25 ? pulse test i d = 13 a i d = 6.5 a i d = 3 a v gs = 10 v v gs = 15 v common source tc = 25c pulse test tc = ? 55c 100 25 6 15 drain ? source voltage v ds (v) common source v ds = 20 v pulse test tc = 25c tc = 100c tc = ? 55c common source v ds = 20 v pulse test preliminary
2SK3797 2004-1-22 4 drain ? source voltage v ds (v) capacitance ? v ds capacitance c (pf) 1 0.1 10 100 1000 10000 1 10 100 case temperature tc (c) r ds (on) ? tc drain ? source on resistance r ds (on) ( ? ) 160 ? 40 0 40 80 120 ? 80 1 0.8 0.6 0.4 0.2 0 total gate charge q g (nc) dynamic input/output characteristics drain ? source voltage v ds (v) gate threshold voltage v th (v) case temperature tc (c) v th ? tc 0 1 2 3 5 ? 80 ? 40 0 40 80 120 160 4 drain power dissipation p d (w) case temperature tc (c) p d ? tc 80 40 0 0 40 80 120 160 20 60 drain ? source voltage v ds (v) i dr ? v ds drain reverse current i dr (a) 0 0.1 ? 0.2 1 10 100 ? 0.6 ? 0.8 ? 1.2 ? 0.4 ? 1 0 60 80 100 500 400 0 40 20 8 4 16 20 0 common source v gs = 10 v pulse test i d = 13a 6.5 3 common source v ds = 10 v i d = 1 ma pulse test common source v gs = 0 v f = 1 mhz tc = 25c c iss c oss c rss common source tc = 25c pulse test 5 3 1 v gs = 0, ? 1 v 10 gate ? source voltage v gs (v) v ds v gs v dd = 100 v 200v 400v common source i d = 13 a tc = 25c pulse test 12 300 200 100 preliminary
2SK3797 2004-1-22 5 ? 15 v 15 v test circuit wave form i ar b vdss v dd v ds r g = 25 ? v dd = 90 v, l = 7.8mh ? ? ? ? ? ? ? ? ? ? ? ? = v dd b vdss b vdss 2 i l 2 1 as channel temperature (innitial) t ch (c) e as ? t ch avalanche energy e as (mj) 800 700 500 400 100 0 25 50 75 100 125 150 r th ? t w pulse width t w (s) normalized transient thrmal impedance r th (t) /r th (ch-c) 0.01 10  0.1 1 10 100  1 < 10 < 100 < 1 10 0.001 drain ? source voltage v ds (v) safe operating area drain current i d (a) 0.1 1 1 10 100 10 1000 100 0.01 duty=0.5 0.2 0.1 0.05 0.02 0.01 single pulse * single nonrepetitive pulse tc = 25c curves must be derated linealy with increase in temperature dc operation tc = 25c 1 ms * v dss max i d max (continous) i d max (pulsed) * 100 s * t p dm t duty = t/t r th (ch-c) = 2.66c/w 600 300 200 preliminary
2SK3797 2004-1-22 6 ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. ? the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. ? the information contained herein is subject to change without notice. 000707ea a restrictions on product use


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